Two-Dimensional Imaging of Trap Distribution in SiO<sub>2</sub>/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

Abstract

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.