Abstract
To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density; the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.
Highlights
To characterize solar cells, several studies, based for their majority on analytical methods, have been carried out in one dimension, two dimensions, or three dimensions [1] [2] [3] [4] [5]
To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method
The objective of this study is to present a new approach of characterization of the solar cells, based on the finite element method
Summary
Several studies, based for their majority on analytical methods, have been carried out in one dimension, two dimensions, or three dimensions [1] [2] [3] [4] [5]. The objective of this study is to present a new approach of characterization of the solar cells, based on the finite element method. Using this method, the continuity equation in two dimensions can be solved, by modeling the crystal of a solar cell in 2D
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