Two-dimensional electron gas modeling in strained InN/GaN hetero-interface under pressure and impurity effects

Abstract

The two-dimensional electron gas (2DEG) density modeling in WZ strained InN/GaN hetero-interface with Ga-face arrangement is considered in this paper. We theoretically investigate the role of an externally applied hydrostatic pressure and impurity's position by analyzing their impact in the presence of built electric field due to the dielectric mismatch between the system and its surrounding matrix. To solve the coupling Schrödinger-Poisson equations, as well as the polarization induced charges, finite element method code is used. Pressure-dependence of dielectric constant, band-gap energy, lattices and internal electric field is considered. The 2DEG appears to be strongly-dependent internal and external perturbations exhibiting a non-monotonic behavior. Our results prove that: (1) the InN channel is more populated for on-center impurity compared to off-center one, (2) the electron density in the triangular shape quantum well increases with the pressure; (3) the 2DEG density is enhanced versus the positive impurity's position and dropped versus pressure.