Abstract
Two-dimensional electron confinement effects have been modeled and experimentally observed in silicon-on-insulator (SOI) gate-all-around (GAA) MOSFETs. Solving the Poisson and Schrödinger equations in a self-consistent manner provides the electron wave functions and the energy levels within the device channel. The variation of these energy levels, as well as the electron concentration profile, have been computed as a function of gate voltage. Transconductance fluctuations are observed as new energy levels become populated.
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