Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency

Abstract

A 2- dimensional analytical sub-threshold model for exploring the novel features of AlGaN/GaN gate material engineered (GME) high electron mobility transistor (HEMT) for reduced short channel effects (SCE) and enhanced carrier transport efficiency (CTE) is proposed. The model accurately predicts the channel potential and electric field (EF) of the conventional and GME HEMT structures. In GME HEMT, the gate is made up of two materials and the work function (WF) difference between the two gate materials results in (1) improved CTE (due to a more uniform electric field along the channel) leading to rapid acceleration of charge carriers and (2) diminished SCEs due to a step in the channel potential. The analytical results have been validated by the device simulator ATLAS.