Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel DG SOI MOSFET

Abstract

In this paper a two-dimensional (2-D) analytical model for the surface potential variation along the channel in a fully depleted dual-gate silicon-on-insulator MOSFETs is proposed to investigate the short-channel effects (SCEs). We demonstrate that the surface potential in the channel region exhibits a step function which causes the screening of the drain potential by the gate near the drain resulting in suppressed SCEs like hot-carrier effect and drain-induced barrier-lowering (DIBL).