Two-dimensional analytical modeling and simulation of the potential and threshold voltage of a new fully depleted dual metal gate SOI MESFET

Abstract

For the first time, the idea of double metal gate structures has been exploited to the conventional fully depleted SOI MESFET to form a new double metal gate (DMG) SOI MESFET structure. A 2-D model for the potential distribution along the bottom of the channel has been developed to investigate the short channel and DIBL effects. It is shown that the bottom potential in the depleted region introduces a step function, which reduces the shift of the minimum potential location in the bottom of the channel, thereby reducing DIBL effect. Finally, the model for the bottom potential distribution is extended to derive an analytical model for the threshold voltage of the DMG structure and the results are compared to the conventional single metal gate (SMG) structure. These models have also been verified by the results of a 2-D device simulator which demonstrate the accuracy of the analytical model.