Abstract
A novel device architecture, retrograde doped HMG (hetero-material gate) MOSFET is presented which combines the advantages of an epitaxial layer in the channel region with the HMG MOSFET. This combination tackles the problems of short channel effects (SCEs), hot electron effects and gate transport efficiency in a single structure by reducing threshold voltage and modifying the electric field pattern and surface potential profile along the channel. The expression for the 2D potential profile in the channel has been derived. The results of surface potential, electric field and threshold voltage have been plotted and compared with their corresponding simulated results.
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