Abstract
We present a two-axis electrostatic MEMS scanner with high-reflectivity monolithic single-crystal-silicon photonic crystal (PC) mirrors suitable for applications in harsh environments. The reflective surfaces of the MEMS scanner are transfer-printed PC mirrors with low polarization dependence, low angular dependence, and reflectivity over 85% in the wavelength range of 1490nm~1505nm and above 90% over the wavelength band of 1550~1570nm. In static mode, the scanner has total scan range of 10.2° on one rotation axis and 7.8° on the other. Dynamic operation on resonance increase the scan range to 21° at 608Hz around the outer rotation axis and 9.5° at 1.73kHz about the inner rotation axis.
Highlights
Optical micro-electro-mechanical systems (MEMS) devices typically employ Aluminum or other metal thin films to enhance reflectivity
Distributed Bragg reflectors made of dielectric stacks [1] have higher reflectivity than metal mirrors and are much more robust in terms of power handling, chemical resistance, and temperature stability, but they are challenging to incorporate in standard MEMS fabrication processes, and their mechanical rigidity and stress make them incompatible with many optical MEMS devices
Photonic Crystal (PC) mirrors [2,3,4,5,6] retain the high reflectivity and robustness of Bragg mirrors, without the excessive rigidity and stress. 2-D PC mirrors are formed by periodic patterning of high-refractive-index films
Summary
Optical micro-electro-mechanical systems (MEMS) devices typically employ Aluminum or other metal thin films to enhance reflectivity. Distributed Bragg reflectors made of dielectric stacks [1] have higher reflectivity than metal mirrors and are much more robust in terms of power handling, chemical resistance, and temperature stability, but they are challenging to incorporate in standard MEMS fabrication processes, and their mechanical rigidity and stress make them incompatible with many optical MEMS devices. Stress-free, monolithic PC mirrors were fabricated in a SCS device layer of a silicon-on-insulator (SOI) wafer using GOPHER (generation of photonic element by RIE) process [13], and attached to MEMS scanners using transfer printing [14]. This technique increases design flexibility by allowing optical components with different characteristics to be integrated on a common MEMS platform. These limits are independent of polarization and angle of incidence, some polarization and angular dependencies were observed within the bands
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