Abstract
Two types of fast-response photodiodes have been prepared using a selective and controlled bath etching process. Both types are sensitive to visible and near infrared radiation (intrinsic photoconductivity). The first of these devices is in essence a flat fused p-n junction of from 2 to 30 microns base width. The germanium opposite the junction is the photosensitive window. Photodiodes of this type show good reproducibility and photo saturation characteristics. Response time for the thinner base devices is essentially limited by the detector load resistance and total circuit capacitance. Circuit rise and fall times of less than 0.05 psec have been attained. Sensitive window areas have ranged from 1.13 X 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to 2.26 X 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
