Abstract

AbstractThe heteroepitaxial growth of InGaN on GaN was studied by in‐situ reflection high‐energy electron diffraction, atomic force microscopy, scanning tunneling microscopy and transmission electron microscopy. The misfit strain between InGaN and GaN was relaxed by the deposition of a few‐nm‐thick wetting layer and the subsequent formation of nano‐islands without misfit dislocations, which is the so‐called Stranski‐Krastanov growth mode. Thus, InGaN nano‐islands with a very high density of around 1012 cm–2 and a very small aspect ratio of ∼2.1 (diameter/height) were achieved. In this paper, we also discuss the problems regarding GaN overgrowth of an InGaN nano‐island layer. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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