Abstract
A two terminal write-once-read-many-times (WORM) memory device based on charge trapping near the interface of anodic aluminum oxide and p+Si is demonstrated. An investigation of the memory properties as a function of the interface morphology is presented. A memory window, defined as the ratio of current before and after the application of a given "write" pulse, of the order of 100 was demonstrated for the best devices studied. The devices also exhibited good stability with time both in terms of retention and in terms of measuring cycles in the "written" state. A variation of the results by less than 10% over 50 measured devices is reported. The current through the devices is analyzed and the mechanisms behind the observed behavior are discussed in detail.
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