Abstract

In this paper, two structures are proposed for the switched-inductor quasi-Z-source inverter. In the proposed structures to extend the voltage gain of inverter, two new switched-inductor structures are used. In the proposed structures, voltage across the capacitors in the Z-source network and in the switched-inductor is symmetric and small. The other advantage of proposed inverters is known as achieving higher voltage gain per smaller duty cycle ratio (of shoot-through). Compared with a conventional continuous input current switched-inductor quasi-Z-source inverter at the same gain voltage, there is less of a ripple of input current in the proposed inverters. In this paper, at first the both the conventional and the proposed switched-inductor Z-source inventers are thoroughly investigated to find out their governing relations. Then, the proposed Z-source inverters are compared with the conventional ones by simulating them to assess their performance efficiency. Next, applying the simple boost pulse width modulation the simulation is carried out with PSCAD/EMTDC software. After that, to evaluate the obtained results, the prototypes of the proposed inverters with 48 Vdc input voltage are used.

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