Abstract
Epitaxial AlN films were deposited on (0001) sapphire using a new metalorganic chemical vapor deposition process in which optimal substrate nitridation is combined with modulated ammonia flow and a growth pressure reduction from 150 torr to 40 torr after the first stage of growth. A significant improvement in the full width half maximum (FWHM) of the rocking curves was obtained. The best layers had FWHM of 330 arc sec/650 arc sec for the (0002)/(1012) reflections, respectively.
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