Abstract
A unified explanation is proposed to consistently explain the two-step degradation of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) under DC positive bias temperature instability (PBTI) stress without or with different drain stress voltages (Vds). For PBTI stress without stress Vds, this initial negative Vth shift is believed to be induced by donor-like defect states corresponding to H2O molecule and intrinsic defects, while for PBTI stress with stress Vds, the negative shift is believed to be induced by donor-like defect states corresponding to oxygen vacancies. The gate-bias-induced electron trapping mechanism is responsible for positive Vth shift. These transitions from negative to positive Vth shift are resulted from the competition between the donor-like states creation and electron trapping.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
