Abstract
Fano resonances are well-known manifestations of the interference between a direct and an indirect ionization process. Here we report on a more complicated interference pattern observed in two-photon photoemission at the Si(100) surface. This two-dimensional Fano profile involves two discrete surface resonances which couple as initial and intermediate states to the silicon valence and conduction band, respectively. Tuning the photon energy across the surface resonance reveals asymmetric line profiles with pronounced destructive interference in the two-photon photoelectron intensities of both initial and intermediate states. The interference pattern is explained by an analytic extension of Fano's model to describe the coupling of two discrete states with two continua. This coupling strongly modifies the photoabsorption and is of general importance for light conversion in nanostructures and light-harvesting devices.
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