Two port S parameter simulation using Spice2G

Abstract

ABSTRACTFrom the definition of S parameters, models for simulating various electronic SPICE circuits having two port networks are developed. Three examples demonstrating the usefulness of the technique and models in simulation are given. The first two examples determine the response for two linear circuits (a) employing high-frequency bipolar junction transistors(b) using GaAsFETs at 25°C . In the third example, at room temperature, a high-frequency bipolar transistor circuit S parameter data was simulated using two port model and the results were compared to another two-port model of high-frequency bipolar transistor amplifier (common emitter) whose measured S parameters are fitted to the model using least square optimisation criteria. The procedure and technique for simulation of two ports using Z, Y, G, H transmission and inverse transmission parameters can be extended by similar steps as is done to the S parameters for a two port.