Abstract
Plasmonic cavities can provide deep subwavelength light confinement, opening up new avenues for enhancing the spontaneous emission process towards both classical and quantum optical applications. Conventionally, light cannot be directly emitted from the plasmonic metal itself. Here, we explore the large field confinement and slow-light effect near the epsilon-near-zero (ENZ) frequency of the light-emitting material itself, to greatly enhance the “forbidden” two-plasmon spontaneous emission (2PSE) process. Using degenerately-doped InSb as the plasmonic material and emitter simultaneously, we theoretically show that the 2PSE lifetime can be reduced from tens of milliseconds to several nanoseconds, comparable to the one-photon emission rate. Furthermore, we show that the optical nonlocality may largely govern the optical response of the ultrathin ENZ film. Efficient 2PSE from a doped semiconductor film may provide a pathway towards on-chip entangled light sources, with an emission wavelength and bandwidth widely tunable in the mid-infrared.
Highlights
Plasmonic cavities can provide deep subwavelength light confinement, opening up new avenues for enhancing the spontaneous emission process towards both classical and quantum optical applications
While the typical one-photon emission (OPE) process emits photons with energy above the material bandgap, the Two-photon emission (TPE) spectrum can be extremely broad starting from near-zero frequencies
We propose a scheme to achieve efficient two-plasmon spontaneous emission (2PSE), by employing a degenerately doped semiconductor thin film that simultaneously serves as the light-emitting medium and the plasmonic cavity
Summary
Plasmonic cavities can provide deep subwavelength light confinement, opening up new avenues for enhancing the spontaneous emission process towards both classical and quantum optical applications. We explore the large field confinement and slow-light effect near the epsilon-near-zero (ENZ) frequency of the light-emitting material itself, to greatly enhance the “forbidden” two-plasmon spontaneous emission (2PSE) process. Rivera et al theoretically proposed alternative approaches to enhance the TPE rate by placing an atomic emitter near a single-layer graphene that supports SPPs28, or a polar dielectric film that supports surface phonon polaritons (SPhPs)[29]. We propose a scheme to achieve efficient two-plasmon spontaneous emission (2PSE), by employing a degenerately doped semiconductor thin film that simultaneously serves as the light-emitting medium and the plasmonic cavity. The 2PSE spectral peak can be flexibly tuned by varying the doping density of the InSb film
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