Abstract
The broadband nonlinear absorption in ZnO nanocrystals embedded in Al2O3 matrix was investigated by Z-scan and pump-probe techniques from 400nm to 800nm. The effective two-photon absorption and three-photon absorption coefficients were determined to be ∼1.1×103 cm/GW at 400nm and ∼1.1×10-1 cm3/GW2 at 800nm, respectively, which are at least two orders of magnitude greater than that in ZnO bulk crystal. It may be attributed to the defect-states-mediated multiphoton absorption process, which was proofed by comparison experiments with different densities of interfacial defect states. The corresponding lifetimes for the intraband relaxation, defect-states trapping, and interband recombination processes were measured by femtosecond transient absorption measurements as τ1 ∼ 1 ps, τ2 ∼ 13 ps, and τ3 ∼ 350 ps, respectively.
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