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Abstract
We report several cases of two photon absorption (TPA) laser assisted device alteration (LADA) using continuous wave (CW) 1,340 nm laser in Si Complimentary Metal-Oxide Semiconductor (CMOS) Integrated Circuits (IC). Two photon absorption using CW 1,340 nm laser in Si was confirmed by photon beam induced photocurrent measurements. TPA LADA showed greater than two times better resolution in critical timing circuit defect localization and debug application, when compared with traditional single photon absorption (SPA) LADA with CW 1,064 nm laser. A simplified analysis on the resolution improvements presented here showed in good agreement with our experimental observations. Further enhancements of this technology are outlined, which we believe will enable this technology for critical timing circuit debug capabilities well into the future generations of Si CMOS Debug applications.
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Schedule a callMore From: Journal of Materials Science: Materials in Electronics
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