Abstract
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.
Highlights
In Natori’s model for ballistic transistors, MOSFET current-voltage (ID − VD) relations were derived based on Landauer’s formula for current through a ballistic conductor
In fitting to device data, we show that a single value for T(E) can accurately predict the ID − VD curves for a given channel length device
We report on a two-parameter quasi-ballistic quantum transport model for nanoscale transistors that extends Natori’s original ballistic model
Summary
In Natori’s model for ballistic transistors, MOSFET current-voltage (ID − VD) relations were derived based on Landauer’s formula for current through a ballistic conductor. We extend this transport model by including two physically meaningful parameters to predict device data accurately. They are transmission probability T and drain-channel coupling parameter Δ. VT to vary, we can account for the effects of the halo implants on the channel length, for example. We relax this requirement when comparing devices over a narrower range of length where the VT variation is small. We provide a detailed length dependence of the parameters we examined, including T and Δ Using these parameters, we predict the minimum ON-resistance (RON) that can be achieved theoretically by setting T = 1. By comparing the two models, we calculate the demarcation length at which one model becomes more appropriate over the other
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