Two MOS transistor based floating memristor circuit and its application as oscillator

Abstract

This research article reports a novel off–the-shelf floating memristor circuit based on MOS transistor. The proposed memristor circuit comprises one NMOS, one PMOS and a constant current source. The designed circuit utilized intrinsic parasitic capacitance instead of conventional metal plate capacitor. Pinch hysteresis curve of the designed memristor is maintained for range of frequencies from 380 kHz to 1 GHz. Parameters of the proposed circuit may be tuned by varying the bias current of current source. Performance of the proposed circuit is verified by SPICE simulator using 0.18 µm CMOS technology parameter. In addition, Process corner variation, temperature variation, supply voltage variation and variation in size of transistor are investigated to justify the robustness of the designed circuit. Total power consumption of the designed memristor is 4 µW. Chip area of the proposed circuit is 336.55 µm2. Moreover, applications of the proposed circuit are well described with memristor based Schmitt Trigger circuit and Wien Bridge oscillator circuit.