Abstract
A global optimization method for discussing quasi-optical power combiner of solid-state millimeter-wave source is provided. The device we use operate at about 150 GHz and GaAs Gunn diodes are chosen here as active sources arranged in a planar matrix of N×N (N-3,5,..., 2k+1, where h is positive integer). The best array and the location of the active elements in the source-array plane which is the surface of one reflector we will discribe later can be given by global optimization, where the radio frequency power can reach sixfold to ninefold larger than the total sum of the individual diode power.
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