Abstract
Two-layer model was applied to interpret the piezoelectric photothermal spectra of bulk CdTe crystals. The assumption of the existence of the subsurface layer of the thermal parameters significantly different from the bulk part of the crystals explains the behavior of amplitude spectra in high absorption region. It was recognized that the thickness of this layer is about 0.5 µm. It is the result of the surface treatment of the sample: grinding, polishing and etching. The thermal and optical parameters of this layer are presented and discussed.
Highlights
Wide gap II–VI semiconductors are still in the center of interests as they can be applied in bandgap engineering, interband and intersubband transitions, diluted materials and devices [1,2,3]
The rear and front configurations in piezoelectric detection are associated with the geometry of sample and a detector position
Numerical analysis of the experimental piezoelectric spectra led us to the following conclusions
Summary
Wide gap II–VI semiconductors are still in the center of interests as they can be applied in bandgap engineering, interband and intersubband transitions, diluted materials and devices [1,2,3]. The mixing of the compounds during the procedure of growth gives the possibility to change electronic and thermal properties, lattice parameters and bandgap energies. The mechanical and optical properties of single crystals depend on various factors such as the quality of the starting material, heat treatment process, pulling rate of ampoule and growth temperature. Based on CdTe, mixed crystals are called “semimagnetic semiconductors” or “diluted magnetic semiconductors (DMS).”. In this kind of materials, one component is a non-magnetic semiconductor and the second is magnetic one.
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