Abstract
During a rapid thermal annealing process at 850°C in a N2 ambient, an as‐deposited amorphous YMnO3 thin film on Si (100) substrates was crystallized with two distinct layers. High‐resolution transmission electron microscopy showed a top layer of c‐axis‐oriented YMnO3 and a bottom layer of polycrystalline YMnO3 in the 100‐nm‐thick YMnO3 thin film. The abrupt change of the crystalline orientation from the c‐axis‐preferred orientation to the random orientation is caused primarily by high stress induced by the c‐axis‐oriented YMnO3 layer. High‐resolution X‐ray diffraction showed that the c‐axis‐oriented YMnO3/polycrystalline YMnO3 structure effectively relieved the stress.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
