Abstract
We investigate the zigzag domain wall structure in ultrathin magnetic films, where the easy direction of magnetization is perpendicular to the film. We calculate the dipolar energy as functions of the zigzag period and the film thickness for an equilibrium configuration in absence of external field. Provided that the domain wall size is large compared with the domain size, we find that the zigzag angle, 𝜃, of zigzag domain wall decreases with the film thickness L. We discuss the results in connection with experimental data reported for amorphous TbCo films grown in external in plane magnetic field by high-frequency ion sputtering and for MnAs on GaAs films.
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