Abstract
Two-dimensional (2D) nucleation mode growth of GaAs molecular beam epitaxy is studied in detail by in-situ scanning electron microscopy. It is shown that the local growth mode changes from 2D mode to one-dimensional (1D) step propagation mode under a critical growth condition which causes mixing of 2D and 1D growth. The mechanism is discussed in terms of step interval homogeneization. Various intermediate 2D growth modes between pure 3D and 1D growths are observed depending on the growth condition. A 3D/2D/1D growth mode phase diagram is obtained.
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