Abstract
Two-dimensional (2D) numerical simulations of self-aligned sub-micron InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were performed to investigate the effects of base band gap narrowing and surface recombination. Base energy band gaps of 0.72 eV and 0.67 eV for GaAs0.51Sb0.49 bases with doping levels of 5×1018 and 5×1019 cm–3 were extracted from the comparison between the measurement data and simulation results. We took into account the surface Fermi level pinning and introduced a surface state model for the emitter side wall and extrinsic base surface. To the best of our knowledge, a good match between measured and simulated InP/GaAsSb DHBTs characteristics, from low to high current densities has not been achieved prior to the present work. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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