Abstract
We have used scanning tunneling microscopy and spectroscopy (STM/S) to study multiple pn junctions on cross-sectional surfaces of both Si and GaAs devices. The spectroscopy results indicate that pn junctions can be resolved at the nanometer scale by using the two-dimensional STS technique. STM is also used to identify Zn dopants on GaAs(110) surfaces. A detail dopant location identification method is presented.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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