Abstract
Results of thermoelectric power measurements are presented for two dimensional hole gas (2DHG) formed at the normal interface of modulation boron doped Si/Si 0.87Ge 0.13/(001) Si fully strained heterostructure for the first time in the temperature range 1.5 to 25 K. The modulation-doped 2DHG sample has carrier sheet density p s of 2×10 11 cm −2 and its mobility value μ is 1.11×10 4 cm 2 V −1 s −1 at liquid 4He temperature. The thermoelectric power is found to be dominated by the phonon drag contribution. A fit to phonon-drag thermopower theory yields a value of 5.5 eV for the screened acoustic phonon deformation potential. A Kohn anomaly is observed at ∼3.5±0.5 K.
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