Abstract

Photonic crystals are the very promising novel materials for micro- and nanophotonics for visible region. To produce photonic crystals for this region of light, artificial structures with characteristic sizes less than 1 μm have to be manufactured. Electrochemical deep anodic etching and plasma etching techniques is normally used to produce such structures in silicon wafers. However, standard way of deep anodic etching realization is not suitable for sub-micrometer porous silicon formation. In the present work combination of the deep anodic etching and focused ion beam techniques is used to produce ordered structure of macropores in silicon.

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