Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

Abstract

A highly ordered two-dimensional array of 48 nm Cu wires was successfully fabricated on Si substrate by the usage of anodic oxidation of aluminum (Al) for the first time. Anodic oxidation was carried out for Al sputtered film on Si substrate covered by a thin thermally oxidized SiO 2 film, which was very effective to protect Si substrate from anodic oxidation. A highly ordered array of nanoholes was formed by the two steps Al anodic oxidation, and finally Cu was deposited by electroless plating in nanoholes which aspect ratio was 2.5. The present method suggests possibility of a large area two-dimensional array of quantum dots or wires on semiconductor substrate, which are considered to be a key technology for future ULSIs operated by single electron tunneling phenomena.