Abstract
A two-dimensional model of aluminum-ion implantation into 4H-SiC at moderate doses (1011 to 1013 cm-2) has been developed. The model is based on a Monte-Carlo simulation using a binary-collision approximation. This simulation reveals that iso-concentration contours are independent of the orientation of the masking edge. Lateral range straggling is extracted by expressing the lateral-concentration profiles as a one-dimensional dual-Pearson-distribution function multiplied by a Gauss-distribution function. Compared to vertical straggling, the lateral straggling is found to be more weakly dependent on projected range.
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