Two-dimensional modeling and analysis of a nanometer transistor as a THz emitter

Abstract

In this paper, we report on the influences of quantum effects, electron exchange-correlation, Fermi velocity, gate to channel distance and viscosity on the plasma frequency and instability of the plasma waves in a nanometer transistor. By extending the analysis to two-dimensional case, allowing oblique wave propagation, including viscosity and departing from gradual channel approximation, we obtain a general analytical expression for dispersion relation, plasma frequency, and “increment.” We found that, while the plasma frequency decreases with the electron exchange-correlation effect, it increases with quantum effects and Fermi velocity. It is shown that the spectrums of plasma waves are discrete both in longitudinal and lateral (transverse) direction. We also express the total radiated power in terms of transistor parameters especially the lateral dimension. Viscosity which is inherently presented in the structure and cannot be neglected, dramatically decrease the emitted power and set a lower limit on the length of transistor. We show that a nanometer transistor with a long width (a long lateral dimension) has advantages for the realization of practical terahertz emitters.