Abstract
Two-dimensional (2D) layered materials offer unique opportunities for building novel nanoscale electronics devices. As the family of 2D materials and their heterostructure continue to grow, it is desirable to have a technique capable of quickly prototyping 2D devices for efficient exploration of new materials and devices. Here, we demonstrate a facile all-dry transfer technique that can very efficiently build 2D devices, and show that a digital inverter can be realized using such technique. Our results can be leveraged for building and testing new types of 2D nanodevices with high throughput.
Highlights
MATERIAL CHARACTERIZATIONMolybdenum disulfide (MoS2) is the prototypical 2D semiconductor, and has been widely explored to construct novel electronic devices [14,15]
Two-dimensional (2D) layered materials hold great promises for enabling new atomically-thin nanodevices that can lead to new paradigms in information processing and computation [1,2]
While a number of 2D inverters have been demonstrated [11,12], most of them are constructed using conventional techniques such as photolithography or e-beam lithography. While these techniques are scalable and can be used towards large scale production, it is still desirable to have an alternative technique that’s capable of very fast prototyping new devices, so that inverters based on different types of 2D materials can be efficiently realized and explored
Summary
Molybdenum disulfide (MoS2) is the prototypical 2D semiconductor, and has been widely explored to construct novel electronic devices [14,15]. To demonstrate the fast-prototyping capability of the dry transfer technique, we use mechanically exfoliated MoS2 in this work. We characterize the exfoliated 2D flakes using Raman spectroscopy
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