Two-dimensional interface engineering of NiS/MoS2/Ti3C2Tx heterostructures for promoting electromagnetic wave absorption capability

Abstract

For the purpose of achieving excellent electromagnetic wave absorption performance, composition control and microstructure design of absorbers are crucial. Ti 3 C 2 T x , transition metal carbides with remarkable conductivity and mechanical properties, are considered as common substrates to construct high-performance absorbers. In order to improve the impedance matching and enrich electromagnetic wave attenuation mechanism of single Ti 3 C 2 T x substrate, transition metal sulfides (MoS 2 , NiS) with outstanding dielectric properties are introduced to fabricate the novel system of NiS/MoS 2 /Ti 3 C 2 T x . Notably, this system has a unique multilayer-scale structure that spherical NiS particles are decorated on the multilayered Ti 3 C 2 T x substrate and two-dimensional (2D) MoS 2 nanosheets stack on the surface like scales. Under the synergistic effects of intense dielectric loss and multiple reflection, NiS/MoS 2 /Ti 3 C 2 T x hybrid shows the wide effective absorption bandwidth (EAB) of 5.04 GHz at 2.1 mm and the minimum reflection loss (RL min ) of −58.48 dB at 2.4 mm. This work provides an innovative idea for the research of novel MXene-based absorbers. • A novel NiS/MoS 2 /Ti 3 C 2 T x hybrid with multilayer-scale structure was prepared. • The introducing of TMDs on MXene enriches EMW attenuation mechanisms. • The optimal RL min reaches −58.48 dB, and the EAB covers 5.04 GHz at 2.1 mm. • This work provides an innovative idea for novel MXene-based absorbers design.