Abstract
We report on highly controllable ferroelectric domain inversion in Yb3+ doped LiNbO3 laser crystal. The ferroelectric domain patterns are fabricated by direct electron beam writing without any previous masking process. Square lattices of inverted domains with diameters and distance between domains as low as 1 μm are demonstrated. The lateral growth of the inverted domains is analyzed as a function of the applied charge and the threshold values for domains in the 1–10 μm length scale are determined. Spatially resolved low temperature fluorescence spectroscopy and non-collinear second harmonic generation experiments are also employed to evaluate the optical properties of the system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
