Year-end Sale % OFF 
Abstract
Strong oscillations on capacitance and conductance have been observed in p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the variation of the conductance maximums with temperature indicates that the dominant perpendicular transport mechanism for electrons is an incoherent two-step tunnelling through deep levels in the gap. Three models have been used to describe the quantum confinement: the simple variational method, the triangular potential approximation and the propagation matrix method. The later approach takes into account the non parabolicity of the conduction band structure and uses a finite height barrier at the insulator-semiconductor interface. A very good agreement between experimental and calculated values for the two lowest subband energy is obtained.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
