Abstract
A two-dimensional electron gas is created on the sidewalls of V grooves etched into a GaAs substrate, using the regrowth by liquid phase epitaxy of an n-AlGaAs modulation-doping layer. The two-dimensional electron gas is characterized by magnetotransport measurements. The dependence on the magnetic field orientation of the Shubnikov–de Haas oscillations shows unambiguously that the two-dimensional electron gas is on the sidewalls, not on the top of the mesas or the bottom of the grooves.
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