Abstract
The Ga0.47In0.53As/InP and Ga0.47In0.53As/Al0.48In0.52As systems have been investigated in terms of two-dimensional electron gas densities formed at these heterostructures in an effort to determine the optimum combination of III-V semiconductors for high electron mobility transistor (HEMT) structures. From this study Ga0.47In0.53As/Al0.48In0.52As is shown to be, in some ways, a more suitable material combination for a HEMT structure than Ga0.47In0.53As/InP. However, the choice between these two combinations of materials will be a tradeoff between ease of fabrication and potential performance. As a consequence, it is suggested that a new HEMT structure (Ga0.47In0.53As/InP/Al0.48In0.52As )consisting of a heavily doped n-type Al0.48In0.52As as the wide band-gap layer with undoped InP as the spacer layer on an undoped Ga0.47In0.53As layer might be preferable.
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