Abstract
We report the first observation of a two-dimensional electron gas bound to a differentially doped semiconductor heterojunction interface. Low temperature Hall mobilities up to 25 000 cm2 V−1 s−1 are observed. Angular-dependent oscillatory magnetoresistance data demonstrate the two dimensionality of the electronic system and the population of two electronic sub-bands. Cyclotron data establish the carrier mass to be 12% bigger than the conduction band edge mass of GaAs and a scattering time that is in good agreement with the scattering time obtained from the Hall mobility.
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