Abstract
(a) Institut fu¨r Schichten und Grenzfla¨chen, Forschungszentrum Ju¨lich, 52425 Ju¨lich,Germany(b) Institute of Semiconductor Physics, NASU, Kiev 03028, Ukraine(c) School of Electrical Engineering, Cornell University, Ithaca, New York 14853, USA(Received July 22, 2002; accepted October 1, 2002)PACS: 72.80.Ey; 72.90.+y; 73.40.KpThis report addresses the study of two-dimensional electron gas (2DEG) transport at low andmoderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN)gateless heterostructures grown on sapphire for HEMT applications. The transmission line model(TLM) patterns of different channel lengths L and the same channel width are used. We havedeveloped a simple theoretical model to adequately describe the observed peculiarities in the I–Vcharacteristics measured in steady-state and pulsed (10
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