Abstract
Organic-inorganic halide perovskite has a wide range of applications in the photoelectric field due to its excellent properties, such as high charge carrier mobility, long carrier lifetime, and high light absorption efficiency. The application of perovskite in memristor devices has been developed recently. In this work, (PEA)2PbI4 single crystals are prepared by a modified space restriction method, and two-dimensional (2D) perovskite single crystal memristor based on Au/(PEA)2PbI4/Au device structure is prepared. The current ON/OFF ratio of the device can reach 103 at compliance current of 10−7 A. The electronic effect and conductive filament mechanism together constitute the working principle of the memristor device. Based on this working principle, multilevel storage can be realized in devices with different current levels.
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