Abstract
Two-dimensional (2D) semiconductor materials have been widely applied for optoelectronic devices, but fast charge recombination severely affects device performance. The construction of a 2D heterostructure is a proven strategy for effectively reducing carrier recombination. 2D Bi2S3/MoS2 heterostructure is prepared by a sequential vapor deposition method. This heterostructure displays a fast response/recovery time of 4/15 ms and a high responsivity of 218.3 μA W−1. The improved photodetection performance is mainly ascribed to the internal electric field-induced efficient charge transfer in the type-II Bi2S3/MoS2 heterostructure. This study provides a guideline to extend other heterostructure photodetectors and improve the photodetection performance.
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