Abstract
A two-dimensional (2-D) analytical model of a dual material gate (DMG) epitaxial (Epi)-MOSFET for improved, SCEs, hot electron effects, and carrier transport efficiency is presented. Using a two-region polynomial potential distribution and a universal boundary condition, we calculated the 2-D potential and electric field distribution along the channel. An expression for threshold voltage for short-channel DMG Epi-MOSFETs is also derived. The ratio of gate lengths has been varied to show which gate length ratio gives the best performance. The analytical results have been validated by the 2-D device simulator ATLAS over a wide range of device parameters and bias conditions.
Published Version
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