Abstract
A novel analytical model for subthreshold slope of a generic double-gate MOSFET (DGMOSFET) with gate-to-source/drain underlap is proposed. The accuracy of the new model is verified based on comparisons with previously published models, experimental data and numerical simulation results. With the reduction in body thickness, an improvement in underlap independent gate (4T) DGMOSFET subthreshold slope value is observed, particularly as back gate oxide asymmetry would increase in comparison to that of front gate oxide thickness. Models demonstrate that asymmetric work function underlap 4T DGMOSFETs would have better device subthreshold slope value along with increased back gate oxide asymmetry.
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