Abstract
An analytical model for the current–voltage characteristics of short channel MOS transistors is presented. The model is a two dimensional model based on the solution of a Poisson equation in the depletion region under the gate. The degradation of inversion carriers’ mobility due to the strong lateral electric field is taken into account. An attractive feature of this model is that it provides an analytical expression for the I–V characteristics of the MOSFET as a function of material and device parameters. In addition it is valid for both short- and long- channel transistors. The numerical I–V characteristics obtained using the proposed model are in close agreement with experimental data. It is concluded that the proposed model is an accurate and efficient model. Consequently it can be used in circuit simulation programs
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