Abstract
A two-dimensional analysis of ion-implanted, bipolar-compatible, long- and short-channel JFETs is presented. The two-dimensional device simulator PISCES is used to study the steady-state characteristics. The linear and saturation regions are analyzed, and insight about the transition region between them is obtained. Short-channel JFET behavior deviates considerably from the conventional theory developed based on the gradual channel approximation, because the x-direction electric field in the channel of the short-channel JFET is much stronger than that in the long-channel JFET. The study shows that the short-channel JFET has several properties that were not previously emphasized: (a) no pinch-off in saturation operation: (b) free-carrier drift velocity saturates in saturation operation: and (c) power-law I-V characteristics in the cutoff region. Details regarding the shape of the conducting channel, the electric field vectors, the current vectors, and the current-voltage characteristics are provided.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
