Abstract
The film bulk acoustic resonator (FBAR) devices are lighter, smaller, cheaper and capable of dealing with larger power than SAW devices. Therefore, the FBAR technology is more competitive in satisfying the commands of modern mobile phone systems. In this paper, the finite-difference time-domain method is applied to analyze the two-dimensional thin-film bulk acoustic wave resonators. The piezoelectric governing equations and Newton's equation of motion are discretized to centered finite-differences in spatial and temporal domain. An electrostatic field simulator named ANSOFT Maxwell 2D is used to calculate the electric field intensity. The frequency domain electrical impedance characteristics of FBAR with different electrode thicknesses are calculated by using the Prony's method. From the simulation results, the optimal electrode thickness is suggested.
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