Abstract
Two different types of antiferromagnetic (AF) interlayer couplings as a function of Si layer thickness, t Si, have been observed in a series of (2.6 nm Fe/ tSi nm Si)22 multilayers. One of the AF-couplings was observed at around t Si=1.2 nm at room temperature (RT) and changed to ferromagnetic (F) coupling at a low temperature. The other AF coupling was observed for t Si thicker than 1.5 nm with a minimum around t Si=2.5 nm, and was almost temperature independent. Negative magnetoresistance has been observed in the multilayers with the AF coupling, and has similar temperature dependence as that of the AF coupling.
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